BSS806NE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSS806NEOptiMOS2 Small-Signal-TransistorProduct Summary FeaturesVDS 20 V N-channelRDS(on),max VGS=2.5 V 57 mW Enhancement modeVGS=1.8 V 82 Ultra Logic level (1.8V rated)ID 2.3 A ESD protected Avalanche rated Qualified according to AEC Q101PG-SOT23 3 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 2

BSS806NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 57mDS(on),max GS Enhancement modeV =1.8 V 82GS Ultra Logic level (1.8V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape

Product specificationBSS806NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 57mDS(on),max GS Enhancement modeV =1.8 V 82GS Ultra Logic level (1.8V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-21

PNP Silicon Switching Transistors BSS 80BSS 82 High DC current gain Low collector-emitter saturation voltage Complementary types: BSS 79, BSS 81 (NPN)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BSS 80 B CHs Q62702-S557 B E C SOT-23BSS 80 C CJs Q62702-S492BSS 82 B CLs Q62702-S560BSS 82 C CMs Q62702-S482Maximum RatingsParameter Symbol Values

SOT SI I O A A SS80 S IT HI T A SISTO S SS80 ISS S T T I D T I 8 8 SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I 8 Di i i T T T i T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V I V I II I V V V V T i I V V II i V V I V V i V I V I V V i 8 I V VT i 8 I V VT i