BSS806NE Todos los transistores

 ..1. Size:529K  infineon
 bss806ne.pdf

BSS806NE OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS 20 V N-channel RDS(on),max VGS=2.5 V 57 mW Enhancement mode VGS=1.8 V 82 Ultra Logic level (1.8V rated) ID 2.3 A ESD protected Avalanche rated Qualified according to AEC Q101 PG-SOT23 3 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 1 2

 7.1. Size:230K  infineon
 bss806n.pdf

BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 57 m DS(on),max GS Enhancement mode V =1.8 V 82 GS Ultra Logic level (1.8V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape

 7.2. Size:158K  tysemi
 bss806n.pdf

Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 57 m DS(on),max GS Enhancement mode V =1.8 V 82 GS Ultra Logic level (1.8V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21

 9.1. Size:179K  siemens
 bss80 bss82.pdf

PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain Low collector-emitter saturation voltage Complementary types BSS 79, BSS 81 (NPN) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 BSS 80 B CHs Q62702-S557 B E C SOT-23 BSS 80 C CJs Q62702-S492 BSS 82 B CLs Q62702-S560 BSS 82 C CMs Q62702-S482 Maximum Ratings Parameter Symbol Values

 9.2. Size:26K  diodes
 bss80b.pdf

SOT SI I O A A SS80 S IT HI T A SISTO S SS80 ISS S T T I D T I 8 8 SOT A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V I I 8 Di i i T T T i T T I A HA A T ISTI S a Ta T I IT DITI II V V I V I II i V V I V I i V I V I II I V V V V T i I V V II i V V I V V i V I V I V V i 8 I V V T i 8 I V V T i