BSS816NW MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS816NW
Código: XCs
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.5 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 1.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 0.75 V
Carga de la puerta (Qg): 0.6 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 47 pF
Resistencia entre drenaje y fuente RDS(on): 0.16 Ohm
Paquete / Cubierta: SOT-323
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BSS816NW Datasheet (PDF)
bss816nw.pdf
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BSS816NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 160mDS(on),max GS Enhancement modeV =1.8 V 240GS Ultra Logic level (1.8V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package
pbss8110d.pdf
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PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3
pbss8110x.pdf
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PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili
pbss8110t.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag
pbss8110y.pdf
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PBSS8110Y100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 21 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation1.3 Applicati
pbss8110z.pdf
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PBSS8110Z100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 8 January 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS9110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curre
bss79 bss81.pdf
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NPN Silicon Switching Transistors BSS 79BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: BSS 80, BSS 82 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BSS 79 B CEs Q62702-S503 B E C SOT-23BSS 79 C CFs Q62702-S501BSS 81 B CDs Q62702-S555BSS 81 C CGs Q62702-S605Maximum RatingsParameter Symbol Values
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