All MOSFET. BSS816NW Datasheet

 

BSS816NW MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSS816NW
   Marking Code: XCs
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.75 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.6 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-323

 BSS816NW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS816NW Datasheet (PDF)

 ..1. Size:182K  infineon
bss816nw.pdf

BSS816NW BSS816NW

BSS816NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 160mDS(on),max GS Enhancement modeV =1.8 V 240GS Ultra Logic level (1.8V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 9.1. Size:150K  nxp
pbss8110d.pdf

BSS816NW BSS816NW

PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3

 9.2. Size:135K  nxp
pbss8110x.pdf

BSS816NW BSS816NW

PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 9.3. Size:123K  nxp
pbss8110t.pdf

BSS816NW BSS816NW

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag

 9.4. Size:163K  nxp
pbss8110y.pdf

BSS816NW BSS816NW

PBSS8110Y100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 21 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a SOT363 (SC-88) plastic package.1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation1.3 Applicati

 9.5. Size:137K  nxp
pbss8110z.pdf

BSS816NW BSS816NW

PBSS8110Z100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 8 January 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS9110Z.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curre

 9.6. Size:157K  siemens
bss79 bss81.pdf

BSS816NW BSS816NW

NPN Silicon Switching Transistors BSS 79BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: BSS 80, BSS 82 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3BSS 79 B CEs Q62702-S503 B E C SOT-23BSS 79 C CFs Q62702-S501BSS 81 B CDs Q62702-S555BSS 81 C CGs Q62702-S605Maximum RatingsParameter Symbol Values

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FDS4935A

 

 
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