BSS816NW PDF and Equivalents Search

 

BSS816NW Specs and Replacement

Type Designator: BSS816NW

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 47 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOT-323

BSS816NW substitution

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BSS816NW datasheet

 ..1. Size:182K  infineon
bss816nw.pdf pdf_icon

BSS816NW

BSS816NW OptiMOS 2 Small-Signal-Transistor Product Summary Features V 20 V DS N-channel R V =2.5 V 160 m DS(on),max GS Enhancement mode V =1.8 V 240 GS Ultra Logic level (1.8V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT323 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package ... See More ⇒

 9.1. Size:150K  nxp
pbss8110d.pdf pdf_icon

BSS816NW

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒

 9.2. Size:135K  nxp
pbss8110x.pdf pdf_icon

BSS816NW

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒

 9.3. Size:123K  nxp
pbss8110t.pdf pdf_icon

BSS816NW

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag... See More ⇒

Detailed specifications: BSS169, BSS214NW, BSS225, BSS606N, BSS670S2L, BSS7728N, BSS7728NG, BSS806NE, IRF1404, BSS84-7, BSS84AKMB, BSS84TA, BSS84TC, BST72A, BSZ014NE2LS5IF, BSZ018NE2LS, BSZ025N04LS

Keywords - BSS816NW MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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