All MOSFET. BSS816NW Datasheet

 

BSS816NW Datasheet and Replacement


   Type Designator: BSS816NW
   Marking Code: XCs
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.75 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.6 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: SOT-323
 

 BSS816NW substitution

   - MOSFET ⓘ Cross-Reference Search

 

BSS816NW Datasheet (PDF)

 ..1. Size:182K  infineon
bss816nw.pdf pdf_icon

BSS816NW

BSS816NWOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 20 VDS N-channelR V =2.5 V 160mDS(on),max GS Enhancement modeV =1.8 V 240GS Ultra Logic level (1.8V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT323 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package

 9.1. Size:150K  nxp
pbss8110d.pdf pdf_icon

BSS816NW

PBSS8110D100 V, 1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat transistor in a plastic SOT457 (SC-74) package.1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation1.3

 9.2. Size:135K  nxp
pbss8110x.pdf pdf_icon

BSS816NW

PBSS8110X100 V, 1 A NPN low VCEsat (BISS) transistorRev. 01 11 May 2005 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.PNP complement: PBSS9110X.1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 9.3. Size:123K  nxp
pbss8110t.pdf pdf_icon

BSS816NW

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS8110T100 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Dec 22Supersedes data of 2003 Jul 28Philips Semiconductors Product specification100 V, 1 APBSS8110TNPN low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT SOT23 packageVCEO collector-emitter voltag

Datasheet: BSS169 , BSS214NW , BSS225 , BSS606N , BSS670S2L , BSS7728N , BSS7728NG , BSS806NE , IRF1404 , BSS84-7 , BSS84AKMB , BSS84TA , BSS84TC , BST72A , BSZ014NE2LS5IF , BSZ018NE2LS , BSZ025N04LS .

History: SI4048DY

Keywords - BSS816NW MOSFET datasheet

 BSS816NW cross reference
 BSS816NW equivalent finder
 BSS816NW lookup
 BSS816NW substitution
 BSS816NW replacement

 

 
Back to Top

 


 
.