BSS84AKMB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS84AKMB
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 4.5 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Encapsulados: SOT883B
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BSS84AKMB datasheet
bss84akmb.pdf
BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Di
bss84akm.pdf
BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV
bss84akv.pdf
BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to
bss84ak.pdf
BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc
Otros transistores... BSS225 , BSS606N , BSS670S2L , BSS7728N , BSS7728NG , BSS806NE , BSS816NW , BSS84-7 , IRFB4110 , BSS84TA , BSS84TC , BST72A , BSZ014NE2LS5IF , BSZ018NE2LS , BSZ025N04LS , BSZ028N04LS , BSZ034N04LS .
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