SI6923DQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI6923DQ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.6(min) V
   Qgⓘ - Carga de la puerta: 14.5 nC
   trⓘ - Tiempo de subida: 30 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TSSOP8

Búsqueda de reemplazo de MOSFET SI6923DQ

SI6923DQ Datasheet (PDF)

..1. Size:68K vishay
si6923dq.pdf

Si6923DQNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFET with Schottky DiodeMOSFET PRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.050 @ VGS = 4.5 V "3.520200.085 @ VGS = 2.5 V "2.7 SCHOTTKY PRODUCT SUMMARYVf (V)VKA (V) Diode Forward Voltage IF (A)20 0.5 V @ 1 A 1.5S KTSSOP-8D K G1 8DS A2 7Si6923DQS A3 6G A4 5D ATop ViewABSOL

9.1. Size:70K vishay
si6925dq.pdf

Si6925DQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.05 @ VGS = 4.5 V "3.40.06 @ VGS = 3.0 V "3.120200.08 @ VGS = 2.5 V "2.7D1 D2TSSOP-8D1 1 D D28S1 2 S27Si6925DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter S

9.2. Size:54K vishay
si6924edq.pdf

Si6924EDQVishay SiliconixN-Channel 2.5-V (G-S) Battery Switch, ESD ProtectionPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.033 @ VGS = 4.5 V "4.628 0.038 @ VGS = 3.0 V "4.3 ESD Protected0.042 @ VGS = 2.5 V "4.1 2000 VFEATURESD Low rDS(on) D rDS(on) Rating at 2.5-V VGSD VGS Max Rating: 14 V D 28-V VDS RatedD Exceeds 2-kV ESD Protection D Symetrical Voltage Blocking (Off Voltag

9.3. Size:72K vishay
si6926dq.pdf

Si6926DQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.035 @ VGS = 4.5 V "4.00.040 @ VGS = 3.0 V "3.720200.045 @ VGS = 2.5 V "3.5D1 D2TSSOP-8D1 1 D D28S1 2 S27Si6926DQ G1 G2S1 3 S26G1 4 G25Top ViewS1 S2N-Channel MOSFET N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramete

9.4. Size:221K vishay
si6925adq.pdf

Si6925ADQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.045 at VGS = 4.5 V 3.9RoHS0.055 at VGS = 3.0 V 20 3.5COMPLIANT0.065 at VGS = 2.5 V 3.0D2D1TSSOP-8G2D1 1 D2 G18S1 2 S27S1 3 S26G1 4 G25Top ViewS2S1Ordering Information: Si6925ADQ-T1-GE3 (Lead (Pb)-free and Halog

9.5. Size:112K vishay
si6926aedq.pdf

Si6926AEDQVishay SiliconixDual N-Channel 2.5-V (G-S) Input Protected Load SwitchFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) Low RDS(on)0.030 at VGS = 4.5 V 4.5 VGS Max Rating: 14 VRoHS0.033 at VGS = 3.0 V 20 4.2 7.6COMPLIANT Exceeds 2 kV ESD Protection0.035 at VGS = 2.5 V 3.9DESCRIPTIONThe Si6926AEDQ is a dual N

9.6. Size:213K vishay
si6928dq.pdf

Si6928DQVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free0.035 at VGS = 10 V 4.0Available300.050 at VGS = 4.5 V 3.4RoHS*COMPLIANTD1 D2TSSOP-8D1 1 D28G1 G2S1 2 S27Si6928DQS1 3 S26G1 4 G25Top ViewS1 S2Ordering Information: Si6928DQ-T1N-Chann

9.7. Size:221K vishay
si6926adq.pdf

Si6926ADQVishay SiliconixDual N-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)0.030 at VGS = 4.5 V 4.5RoHSCOMPLIANT0.033 at VGS = 3.0 V 4.2200.035 at VGS = 2.5 V 3.90.043 at VGS = 1.8 V 3.6D1 D2TSSOP-8D1 1 D28 G1 G2S1 2 S27S1 3 S26G1 4 G25Top ViewS1 S2Ordering Information: Si6926ADQ-T1-GE3

9.8. Size:226K vishay
si6924aedq.pdf

Si6924AEDQVishay SiliconixN-Channel 2.5-V (G-S) Battery Switch, ESD ProtectionFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Low RDS(on)0.033 at VGS = 4.5 V 4.6 VGS Max Rating: 14 VRoHS0.038 at VGS = 3.0 V 28 4.3COMPLIANT Exceeds 2 kV ESD Protection0.042 at VGS = 2.5 V 4.1 28 V VDS Rated Symmetrical Voltage Blocking

Otros transistores... SI4812DY , SI4816DY , SI4818DY , SI4831DY , SI4832DY , SI4833DY , SI6820DQ , SI6821DQ , 13N50 , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , SML1001R3BN , SML1001R3HN , SML1001RAN .

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