BSZ034N04LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSZ034N04LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 500 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm
Paquete / Cubierta: TSDSON-8FL
Búsqueda de reemplazo de BSZ034N04LS MOSFET
BSZ034N04LS Datasheet (PDF)
bsz034n04ls.pdf

BSZ034N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.4 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-
bsz036ne2ls.pdf

For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS
bsz033ne2ls5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
bsz035n03ms bsz035n03msg.pdf

BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO
Otros transistores... BSS84AKMB , BSS84TA , BSS84TC , BST72A , BSZ014NE2LS5IF , BSZ018NE2LS , BSZ025N04LS , BSZ028N04LS , IRFP250N , BSZ035N03LS , BSZ035N03MS , BSZ036NE2LS , BSZ042N06NS , BSZ0501NSI , BSZ0506NS , BSZ050N03LS , BSZ050N03MS .
History: SQD07N25-350H
History: SQD07N25-350H



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH1566AKQ | JMSH1566AK | JMSH1566AG | JMSH1565AUS | JMSH1565APS | JMSH1565AKSQ | JMSH1565AKS | JMSH1565AGS | JMSH1552PU | JMSH1552PP | JMSH1552PK | JMSH1552PG | JMSH1552AU | JMSH1552AP | JMSH1552AK | JMSH1552AG
Popular searches
c1740 transistor | c828 transistor | c4467 | c2383 transistor | 2n3055 equivalent | s9015 datasheet | 2n6488 | 30j127 datasheet