BSZ034N04LS MOSFET. Datasheet pdf. Equivalent
Type Designator: BSZ034N04LS
Marking Code: 034N04L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 19 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: TSDSON-8FL
BSZ034N04LS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSZ034N04LS Datasheet (PDF)
bsz034n04ls.pdf
BSZ034N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.4 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 40 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TSDSON-
bsz036ne2ls.pdf
For BSZ036NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPSVGS=4.5 V 5.1 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TS
bsz033ne2ls5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ033NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
bsz035n03ms bsz035n03msg.pdf
BSZ035N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 4.3 100% avalanche testedID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FO
bsz039n06ns.pdf
BSZ039N06NSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc
bsz031ne2ls5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSZ031NE2LS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Optimized for high performance buck converters Very Low FOM for High Frequency SMPSQOSS
bsz037n06ls5.pdf
BSZ037N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync rec. 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Indus
bsz035n03lsg.pdf
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bsz035n03ls.pdf
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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP045N10 | STF12N50M2 | FDT457N | FSS275 | SL2309A | CJQ4435S
History: NCEP045N10 | STF12N50M2 | FDT457N | FSS275 | SL2309A | CJQ4435S
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