BSZ036NE2LS Todos los transistores

For BSZ036NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 5.1 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS PG-TS

BSZ035N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 4.3 100% avalanche tested ID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FO

BSZ039N06NS MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc

BSZ037N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync rec. 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Indus

BSZ034N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 3.4 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 40 A 100% avalanche tested QOSS 22 nC Superior thermal resistance QG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applications PG-TSDSON-

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