BSZ036NE2LS MOSFET Datasheet: N-Ch, 25V, 16A. Full specification with pinout and replacement list

BSZ036NE2LS Specs and Replacement

   Type Designator: BSZ036NE2LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TSDSON-8FL

BSZ036NE2LS substitution

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BSZ036NE2LS datasheet

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For BSZ036NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 3.6 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 5.1 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS PG-TS... See More ⇒

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BSZ035N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 3.5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 4.3 100% avalanche tested ID 40 A PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FO... See More ⇒

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BSZ039N06NS MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. Rec 100% avalanche tested Superior thermal resistance N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Higher solder joint reliability due to enlarged source interc... See More ⇒