BSZ050N03LS Todos los transistores

 

BSZ050N03LS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSZ050N03LS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 790 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TSDSON-8FL

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BSZ050N03LS datasheet

 ..1. Size:325K  infineon
 bsz050n03ls.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

 0.1. Size:327K  infineon
 bsz050n03lsg.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

 5.1. Size:318K  infineon
 bsz050n03ms.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

 5.2. Size:320K  infineon
 bsz050n03msg.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product

MOSTRAR MÁS

Otros transistores... BSZ028N04LS , BSZ034N04LS , BSZ035N03LS , BSZ035N03MS , BSZ036NE2LS , BSZ042N06NS , BSZ0501NSI , BSZ0506NS , IRF9540 , BSZ050N03MS , BSZ058N03LS , BSZ058N03MS , BSZ060NE2LS , BSZ065N03LS , BSZ075N08NS5 , BSZ084N08NS5 , BSZ0901NS .

 

 

 

 

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