BSZ050N03LS PDF and Equivalents Search

 

BSZ050N03LS Specs and Replacement

Type Designator: BSZ050N03LS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 790 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TSDSON-8FL

BSZ050N03LS substitution

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BSZ050N03LS datasheet

 ..1. Size:325K  infineon
 bsz050n03ls.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

 0.1. Size:327K  infineon
 bsz050n03lsg.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications PG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

 5.1. Size:318K  infineon
 bsz050n03ms.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product ... See More ⇒

 5.2. Size:320K  infineon
 bsz050n03msg.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.7 GS 100% avalanche tested I 40 A D PG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product ... See More ⇒

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Detailed specifications: BSZ028N04LS, BSZ034N04LS, BSZ035N03LS, BSZ035N03MS, BSZ036NE2LS, BSZ042N06NS, BSZ0501NSI, BSZ0506NS, IRF9540, BSZ050N03MS, BSZ058N03LS, BSZ058N03MS, BSZ060NE2LS, BSZ065N03LS, BSZ075N08NS5, BSZ084N08NS5, BSZ0901NS

Keywords - BSZ050N03LS MOSFET specs

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