All MOSFET. BSZ050N03LS Datasheet

 

BSZ050N03LS Datasheet and Replacement


   Type Designator: BSZ050N03LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TSDSON-8FL
 

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BSZ050N03LS Datasheet (PDF)

 ..1. Size:325K  infineon
 bsz050n03ls.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 0.1. Size:327K  infineon
 bsz050n03lsg.pdf pdf_icon

BSZ050N03LS

BSZ050N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 5mDS(on),max Optimized technology for DC/DC converters I 40 AD Qualified according to JEDEC1) for target applicationsPG-TSDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 5.1. Size:318K  infineon
 bsz050n03ms.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

 5.2. Size:320K  infineon
 bsz050n03msg.pdf pdf_icon

BSZ050N03LS

BSZ050N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeatures V 30 VDS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.5mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.7GS 100% avalanche tested I 40 ADPG-TSDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

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Datasheet: BSZ028N04LS , BSZ034N04LS , BSZ035N03LS , BSZ035N03MS , BSZ036NE2LS , BSZ042N06NS , BSZ0501NSI , BSZ0506NS , K3569 , BSZ050N03MS , BSZ058N03LS , BSZ058N03MS , BSZ060NE2LS , BSZ065N03LS , BSZ075N08NS5 , BSZ084N08NS5 , BSZ0901NS .

Keywords - BSZ050N03LS MOSFET datasheet

 BSZ050N03LS cross reference
 BSZ050N03LS equivalent finder
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