BSZ060NE2LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

For BSZ060NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter (Server,VGA) Very Low FOMQOSS for High Frequency SMPS RDS(on),max VGS=10 V 6 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 8.1 Excellent gate charge x R product (FOM) ID 40 A DS(on) Very low on-resistance R @ V =4.5 VDS(on) GSPG-TSDSON-

For BSZ065N03LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for high performance Buck converter (Server,VGA)RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPSVGS=4.5 V 8.6 Low FOMSW for High Frequency SMPSID 40 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu

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TypeBSZ068N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 6.8 mW Superior thermal resistanceID 40 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliantPG-TSD

BSZ063N04LS6MOSFETTSDSON-8 FLOptiMOSTM 6 Power-Transistor, 40 V(enlarged source interconnection)Features Optimized for synchronous application Very low on-resistance RDS(on) 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free accord

BSZ065N06LS5MOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Tab