BSZ060NE2LS - аналоги, параметры транзистора - Справочник транзисторов

BSZ060NE2LS даташит

..1. Size:699K infineon
bsz060ne2ls.pdf pdf_icon

For BSZ060NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter (Server,VGA) Very Low FOMQOSS for High Frequency SMPS RDS(on),max VGS=10 V 6 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 8.1 Excellent gate charge x R product (FOM) ID 40 A DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS PG-TSDSON-

9.1. Size:657K infineon
bsz065n03ls.pdf pdf_icon

For BSZ065N03LS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 6.5 mW Very low FOMQOSS for High Frequency SMPS VGS=4.5 V 8.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V PG-TSDSON-8 (fu

9.2. Size:455K infineon
bsz067n06ls3 bsz067n06ls3g.pdf pdf_icon

%* ! % TM #;B 1= &=- >5>?;= #=;0@/? %@9 9 -=D Features D R #562= 7@C 9 89 7C6BF6?4J DH E49 ?8 2?5 DJ?4 C64 7 m D n) m x R ) AE > K65 E649?@=@8J 7@C 4@?G6CE6CD D R I46==6?E 82E6 492C86 I AC@5F4E ) ' D n) R /6CJ =@H @? C6D DE2?46 , D n) R ( 492??6= =@8 4 =6G6= R 2G2=2?496 E6DE65 R *3 7C66 A=2E ?8 , @"- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D R

9.3. Size:691K infineon
bsz068n06ns.pdf pdf_icon

Type BSZ068N06NS OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 6.8 mW Superior thermal resistance ID 40 A N-channel QOSS nC 19 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant PG-TSD