BSZ075N08NS5 Todos los transistores

 ..1. Size:1358K  infineon
 bsz075n08ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

 9.1. Size:243K  infineon
 bsz076n06ns3.pdf

Type BSZ076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 7.6 m DS(on),max Optimized technology for DC/DC converters I 20 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R

 9.2. Size:1428K  infineon
 bsz070n08ls5.pdf

BSZ070N08LS5 MOSFET TSDSON-8 FL OptiMOS 5 Power-Transistor, 80 V (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 9.3. Size:1446K  infineon
 bsz0703ls.pdf

BSZ0703LS MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi