BSZ075N08NS5 PDF and Equivalents Search

 

BSZ075N08NS5 Specs and Replacement

Type Designator: BSZ075N08NS5

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TSDSON-8FL

BSZ075N08NS5 substitution

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BSZ075N08NS5 datasheet

 ..1. Size:1358K  infineon
bsz075n08ns5.pdf pdf_icon

BSZ075N08NS5

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ075N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv... See More ⇒

 9.1. Size:243K  infineon
bsz076n06ns3.pdf pdf_icon

BSZ075N08NS5

Type BSZ076N06NS3 G OptiMOSTM3 Power-Transistor Product Summary Features V 60 V DS Ideal for high frequency switching and sync. rec. R 7.6 m DS(on),max Optimized technology for DC/DC converters I 20 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R... See More ⇒

 9.2. Size:1428K  infineon
bsz070n08ls5.pdf pdf_icon

BSZ075N08NS5

BSZ070N08LS5 MOSFET TSDSON-8 FL OptiMOS 5 Power-Transistor, 80 V (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian... See More ⇒

 9.3. Size:1446K  infineon
bsz0703ls.pdf pdf_icon

BSZ075N08NS5

BSZ0703LS MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor, 60 V (enlarged source interconnection) Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi... See More ⇒

Detailed specifications: BSZ0501NSI, BSZ0506NS, BSZ050N03LS, BSZ050N03MS, BSZ058N03LS, BSZ058N03MS, BSZ060NE2LS, BSZ065N03LS, IRF4905, BSZ084N08NS5, BSZ0901NS, BSZ0901NSI, BSZ0902NS, BSZ0902NSI, BSZ0904NSI, BSZ0907ND, BSZ0908ND

Keywords - BSZ075N08NS5 MOSFET specs

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