BSZ097N10NS5 Todos los transistores

 ..1. Size:1391K  infineon
 bsz097n10ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSZ097N10NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSZ097N10NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching Optimized technology for DC/DC converters E

 7.1. Size:635K  infineon
 bsz097n04lsg.pdf

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 9.1. Size:1458K  infineon
 bsz099n06ls5.pdf

BSZ099N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor,60V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Table

 9.2. Size:1453K  infineon
 bsz0909ns rev3.2.pdf

n-Channel Power MOSFET OptiMOS BSZ0909NS Data Sheet 3.2, 2011-09-22 Final Industrial & Multimarket OptiMOS Power-MOSFET BSZ0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

 9.3. Size:681K  infineon
 bsz0901ns.pdf

For BSZ0901NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 2.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R @

 9.4. Size:617K  infineon
 bsz0901nsi.pdf

BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

 9.5. Size:676K  infineon
 bsz0908nd.pdf

BSZ0908ND PowerStage 3x3 Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Enhancement mode RDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated) VGS=4.5 V 25 13 Avalanche rated ID 19 30 A 100% Lead-free; RoHS compliant PG-WISON-8 Halogen-free according to IEC61249-2-21 Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090

 9.6. Size:634K  infineon
 bsz0904nsi.pdf

BSZ0904NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 4.0 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 12 nC 100% avalanche tested QG(0V..10V) 17 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

 9.7. Size:1556K  infineon
 bsz0909nd.pdf

BSZ0909ND MOSFET PowerStage 3x3 PowerStage 3x3 Features Dual N-channel OptiMOS MOSFET Enhancement mode Logic level (4.5V rated) Avalanche rated 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit V 30 V DS R 18 m DS(on),max I 20 A D Q 2.3 nC OSS Q (0V..4.5V) 1.8 nC G Type /

 9.8. Size:666K  infineon
 bsz0902ns.pdf

BSZ0902NS For OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 2.6 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 3.5 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R

 9.9. Size:1457K  infineon
 bsz0994ns.pdf

BSZ0994NS MOSFET TSDSON-8 FL OptiMOSTM Power-MOSFET, 30 V (enlarged source interconnection) Features Optimized for high performance Wireless charger Very low FOM for High Frequency SMPS QOSS Low FOM for High Frequency SMPS SW Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Superior the

 9.10. Size:588K  infineon
 bsz0902nsi.pdf

BSZ0902NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 17 nC 100% avalanche tested QG(0V..10V) 24 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

 9.11. Size:714K  infineon
 bsz0907nd.pdf

BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Enhancement mode RDS(on),max VGS=10 V 9.5 7.2 mW Logic level (4.5V rated) VGS=4.5 V 13 10 Avalanche rated ID 25 30 A 100% Lead-free; RoHS compliant PG-WISON-8 Halogen-free according to IEC61249-2-21 Type Package Marking Lead Free BSZ