BSZ097N10NS5 - описание и поиск аналогов

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSZ097N10NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSZ097N10NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching Optimized technology for DC/DC converters E

%* ! % E #;B 1= &=- >5>?;= #=;0@/? %@9 9 -=D Features 4 D Q 2CD CG D49 ?8 ') - . 7@B -'*- 7 m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 4 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 D6CD65 Q

BSZ099N06LS5 MOSFET TSDSON-8 FL OptiMOSTM Power-Transistor,60V (enlarged source interconnection) Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Table

n-Channel Power MOSFET OptiMOS BSZ0909NS Data Sheet 3.2, 2011-09-22 Final Industrial & Multimarket OptiMOS Power-MOSFET BSZ0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS

For BSZ0901NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 2.0 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 2.6 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R @

BSZ0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.1 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

BSZ0908ND PowerStage 3x3 Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Enhancement mode RDS(on),max VGS=10 V 18 9 mW Logic level (4.5V rated) VGS=4.5 V 25 13 Avalanche rated ID 19 30 A 100% Lead-free; RoHS compliant PG-WISON-8 Halogen-free according to IEC61249-2-21 Type Package Marking Lead Free BSZ0908ND PG-WISON-8 090

BSZ0904NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 4.0 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 12 nC 100% avalanche tested QG(0V..10V) 17 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

BSZ0909ND MOSFET PowerStage 3x3 PowerStage 3x3 Features Dual N-channel OptiMOS MOSFET Enhancement mode Logic level (4.5V rated) Avalanche rated 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit V 30 V DS R 18 m DS(on),max I 20 A D Q 2.3 nC OSS Q (0V..4.5V) 1.8 nC G Type /

BSZ0902NS For OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter (Server,VGA) RDS(on),max VGS=10 V 2.6 mW Very Low FOMQOSS for High Frequency SMPS VGS=4.5 V 3.5 Low FOMSW for High Frequency SMPS ID 40 A Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 (fused leads) Very low on-resistance R

BSZ0994NS MOSFET TSDSON-8 FL OptiMOSTM Power-MOSFET, 30 V (enlarged source interconnection) Features Optimized for high performance Wireless charger Very low FOM for High Frequency SMPS QOSS Low FOM for High Frequency SMPS SW Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R @ V =4.5 V DS(on) GS 100% avalanche tested Superior the

BSZ0902NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diode ID 40 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 17 nC 100% avalanche tested QG(0V..10V) 24 nC Superior thermal resistance PG-TSDSON-8 (fused leads) N-cha

BSZ0907ND Dual N-Channel OptiMOS MOSFET Product Summary Features Q1 Q2 Dual N-channel OptiMOS MOSFET VDS 30 30 V Enhancement mode RDS(on),max VGS=10 V 9.5 7.2 mW Logic level (4.5V rated) VGS=4.5 V 13 10 Avalanche rated ID 25 30 A 100% Lead-free; RoHS compliant PG-WISON-8 Halogen-free according to IEC61249-2-21 Type Package Marking Lead Free BSZ