2SK1009 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1009
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET 2SK1009

2SK1009 Datasheet (PDF)

..1. Size:200K inchange semiconductor
2sk1009.pdf

isc N-Channel MOSFET Transistor 2SK1009DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS

0.1. Size:167K fuji
2sk1009-01.pdf

8.1. Size:245K 1
2sk1007-01.pdf

FUJI POWER MOSFET2SK1007-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaxi

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2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

8.3. Size:211K 1
2sk1006-01mr.pdf

FUJI POWER MOSFET2SK1006-01MRN-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECSC-67EIAJEquivalent circuit schematicMax

8.4. Size:73K fuji
2sk1005.pdf

8.5. Size:127K fuji
2sk1006-01m.pdf

8.6. Size:73K fuji
2sk1004.pdf

8.7. Size:73K fuji
2sk1006.pdf

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2sk1008-01.pdf

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2sk932 2sk937 2sk968 2sk998 2sk1000.pdf

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2sk1001.pdf

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2sk1007.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL

8.12. Size:265K inchange semiconductor
2sk1008.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1008DESCRIPTIONDrain Current I =4.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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