2SK1009 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1009
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 80 W
Предельно допустимое напряжение сток-исток |Uds|: 450 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 50 ns
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.3 Ohm
Тип корпуса: TO-220
2SK1009 Datasheet (PDF)
2sk1009.pdf
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isc N-Channel MOSFET Transistor 2SK1009DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS GS
2sk1007-01.pdf
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FUJI POWER MOSFET2SK1007-01N-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulatorsUPS DC-DC converters3. SourceGeneral purpose power amplifierJEDEC TO-220ABEIAJ SC-46Equivalent circuit schematicMaxi
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
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2sk1006-01mr.pdf
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FUJI POWER MOSFET2SK1006-01MRN-CHANNEL SILICON POWER MOSFETF- II SERIESOutline DrawingsFeaturesHigh currentTO-220F15Low on-resistanceNo secondary breakdownLow driving powerHigh voltageVGSS= 30V GuaranteeApplications Switching regulators2.54UPS DC-DC converters3. SourceGeneral purpose power amplifierJEDECSC-67EIAJEquivalent circuit schematicMax
2sk1007.pdf
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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1007 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS= 450V(Min) APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL
2sk1008.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1008DESCRIPTIONDrain Current I =4.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vo
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