2SK1319 Todos los transistores

 ..1. Size:199K  inchange semiconductor
 2sk1319.pdf

isc N-Channel MOSFET Transistor 2SK1319 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Sou

 8.1. Size:135K  toshiba
 2sk1310.pdf

 8.2. Size:174K  toshiba
 2sk1310a.pdf

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power Po 190 W (Min.) Drain Efficiency = 65% (Typ.) D Frequency f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Sou

 8.3. Size:96K  renesas
 rej03g0929 2sk1317ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:96K  renesas
 rej03g0930 2sk1318ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:108K  renesas
 rej03g0927 2sk1313lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:141K  renesas
 rej03g0928 2sk1316lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:76K  renesas
 e2081267 2sk1315l.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:63K  hitachi
 2sk1318.pdf

2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK13

 8.9. Size:30K  hitachi
 2sk1313 2sk1314.pdf

2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Ma

 8.10. Size:48K  hitachi
 2sk1317.pdf

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1317 Absolute Maximum Ratings (Ta = 25

 8.11. Size:30K  hitachi
 2sk1315 2sk1316.pdf

2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1315(L)(S), 2SK1316(L)(S

 8.12. Size:252K  inchange semiconductor
 2sk1318.pdf

isc N-Channel MOSFET Transistor 2SK1318 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 120V(Min) DSS Static Drain-Source On-Resistance R = 120m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.