isc N-Channel MOSFET Transistor 2SK1319DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Sou

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power : Po 190 W (Min.) Drain Efficiency : = 65% (Typ.) D Frequency : f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 100 VGate-Sou

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1318Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1269 (Z)1st. EditionJan. 2001Features Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. GateG2. Drain3. SourceS2SK13

2SK1313(L)(S), 2SK1314(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1313(L)(S), 2SK1314(L)(S)Absolute Ma

2SK1317Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driverOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1317Absolute Maximum Ratings (Ta = 25

2SK1315(L)(S), 2SK1316(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driverOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1315(L)(S), 2SK1316(L)(S

isc N-Channel MOSFET Transistor 2SK1318FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 120V(Min)DSSStatic Drain-Source On-Resistance: R = 120m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.