2SK1319 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK1319 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 250 V DSS GS V Gate-Sou

2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Unit in mm Output Power Po 190 W (Min.) Drain Efficiency = 65% (Typ.) D Frequency f = 230 MHz Push-Pull Structure Package MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Sou

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1318 Silicon N Channel MOS FET High Speed Power Switching ADE-208-1269 (Z) 1st. Edition Jan. 2001 Features Low on-resistance High speed switching Low drive current 4V gate drive device can be driven from 5V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D 1 2 3 1. Gate G 2. Drain 3. Source S 2SK13

2SK1313(L)(S), 2SK1314(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1313(L)(S), 2SK1314(L)(S) Absolute Ma

2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1317 Absolute Maximum Ratings (Ta = 25

2SK1315(L)(S), 2SK1316(L)(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1315(L)(S), 2SK1316(L)(S

isc N-Channel MOSFET Transistor 2SK1318 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 120V(Min) DSS Static Drain-Source On-Resistance R = 120m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.