2SK1320 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK1320DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 300 VDSS GSV Gate-Sour

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1328, 2SK1329 Silicon N Channel MOS FET REJ03G0931-0200 (Previous: ADE-208-1270) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: T

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1322 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1324DESCRIPTIONDrain Current I =2A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1329FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 600m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1321 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS=450V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1328FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 550m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1323 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- : VDSS= 800V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Volta