2SK1320 Todos los transistores

 ..1. Size:199K  inchange semiconductor
 2sk1320.pdf

isc N-Channel MOSFET Transistor 2SK1320 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 300 V DSS GS V Gate-Sour

 8.1. Size:94K  renesas
 2sk1328 2sk1329.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:96K  renesas
 rej03g0931 2sk1328ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:82K  renesas
 2sk1328.pdf

2SK1328, 2SK1329 Silicon N Channel MOS FET REJ03G0931-0200 (Previous ADE-208-1270) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name T

 8.4. Size:59K  inchange semiconductor
 2sk1322.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1322 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag

 8.5. Size:199K  inchange semiconductor
 2sk1324.pdf

isc N-Channel MOSFET Transistor 2SK1324 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.6. Size:265K  inchange semiconductor
 2sk1329.pdf

isc N-Channel MOSFET Transistor 2SK1329 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 600m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.7. Size:59K  inchange semiconductor
 2sk1321.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1321 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS=450V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

 8.8. Size:265K  inchange semiconductor
 2sk1328.pdf

isc N-Channel MOSFET Transistor 2SK1328 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.9. Size:59K  inchange semiconductor
 2sk1323.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1323 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- VDSS= 800V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Volta