2SK1320 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK1320 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 300 V DSS GS V Gate-Sour

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1328, 2SK1329 Silicon N Channel MOS FET REJ03G0931-0200 (Previous ADE-208-1270) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name T

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1322 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS=500V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1324 DESCRIPTION Drain Current I =2A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1329 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 600m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1321 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS=450V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltag

isc N-Channel MOSFET Transistor 2SK1328 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 550m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1323 DESCRIPTION Drain Current ID= 2A@ TC=25 Drain Source Voltage- VDSS= 800V(Min) APPLICATIONS Designed for high voltage, high speed power switching. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Volta