2SK1699 Datasheet. Equivalente

 ..1. Size:212K  inchange semiconductor
 2sk1699.pdf

isc N-Channel MOSFET Transistor 2SK1699 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Voltage high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS G

 8.1. Size:113K  sanyo
 2sk1691.pdf

Ordering number EN4224 N-Channel Silicon MOSFET 2SK1691 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A [2SK1691] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP unit mm 2090A [2SK1691] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 G

 8.2. Size:113K  sanyo
 2sk1690.pdf

Ordering number EN4223 N-Channel Silicon MOSFET 2SK1690 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A [2SK1690] 4.5 10.2 1.3 1.2 0.8 0.4 1 2 3 1 Gate 2 Drain 3 Source 2.55 2.55 SANYO SMP unit mm 2090A [2SK1690] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 G

 8.3. Size:97K  renesas
 rej03g1373 2sk1697ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:29K  hitachi
 2sk1697.pdf

2SK1697 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid drive Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK1697 Absolut

 8.5. Size:29K  hitachi
 2sk1698.pdf

2SK1698 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid drive Outline UPAK 1 2 3 4 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK1698 Absolut

 8.6. Size:155K  no
 2sk1693.pdf

 8.7. Size:67K  no
 2sk1692.pdf

 8.8. Size:46K  shindengen
 2sk1695 f10w50c.pdf

 8.9. Size:48K  shindengen
 2sk1696 fp10w50c.pdf

 8.10. Size:48K  shindengen
 2sk1694 fp8v50.pdf

 8.11. Size:213K  inchange semiconductor
 2sk1693.pdf

isc N-Channel MOSFET Transistor 2SK1693 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching Suitable for switching regulator, DC DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAM

 8.12. Size:218K  inchange semiconductor
 2sk1692.pdf

isc N-Channel MOSFET Transistor 2SK1692 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed. high current switching applications. DC-DC converter and motor driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL AR