2SK1699 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1699
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO-220
2SK1699 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1699 Datasheet (PDF)
2sk1699.pdf
isc N-Channel MOSFET Transistor 2SK1699DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh Voltagehigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS G
2sk1691.pdf
Ordering number:EN4224N-Channel Silicon MOSFET2SK1691Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1691]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1691]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G
2sk1690.pdf
Ordering number:EN4223N-Channel Silicon MOSFET2SK1690Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A[2SK1690]4.510.21.31.20.80.41 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : SMPunit:mm2090A[2SK1690]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : G
rej03g1373 2sk1697ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1697.pdf
2SK1697Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1697Absolut
2sk1698.pdf
2SK1698Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. Suitable for DC DC converter, motor drive, power switch, solenoid driveOutlineUPAK1234D1. GateG2. Drain3. Source4. DrainS2SK1698Absolut
2sk1693.pdf
isc N-Channel MOSFET Transistor 2SK1693DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switchingSuitable for switching regulator, DCDC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM
2sk1692.pdf
isc N-Channel MOSFET Transistor 2SK1692DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =900 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed. high current switching applications.DC-DC converter and motor driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL AR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
