2SK1701 Todos los transistores

 

2SK1701 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1701
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
   Paquete / Cubierta: TO220
 

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2SK1701 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 2sk1701.pdf pdf_icon

2SK1701

isc N-Channel MOSFET Transistor 2SK1701DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching.Low drive current.Suitable for motor control,switching regulator and DC DC converter.ABSOLUTE MAXIMUM RATING

 8.1. Size:318K  toshiba
 2sk170.pdf pdf_icon

2SK1701

2SK170 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) High breakdown voltage: VGDS = -40 V Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

 8.2. Size:212K  inchange semiconductor
 2sk1707.pdf pdf_icon

2SK1701

isc N-Channel MOSFET Transistor 2SK1707DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 8.3. Size:209K  inchange semiconductor
 2sk1706.pdf pdf_icon

2SK1701

isc N-Channel MOSFET Transistor 2SK1706DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies, converters and power motor controlsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

MOSTRAR MÁS

Otros transistores... 2SK1662 , 2SK1674 , 2SK1677 , 2SK1678 , 2SK1679 , 2SK1680 , 2SK1699 , 2SK1700 , IRFP260N , 2SK1703 , 2SK1704 , 2SK1705 , 2SK1706 , 2SK1707 , 2SK1708 , 2SK1709 , 2SK1819 .

History: PHT11N06LT | FDS6699S | SML802R4AN | WSR80N08 | BUZ42 | FRM244D

 

 
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