2SK1974 Todos los transistores

 ..1. Size:215K  inchange semiconductor
 2sk1974.pdf

isc N-Channel MOSFET Transistor 2SK1974 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS

 8.1. Size:82K  renesas
 2sk1971.pdf

2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code PRSS0004ZF-A (Package name

 8.2. Size:360K  rohm
 2sk1976.pdf

 8.3. Size:86K  no
 2sk1975.pdf

 8.4. Size:221K  inchange semiconductor
 2sk1971.pdf

isc N-Channel MOSFET Transistor 2SK1971 DESCRIPTION Drain Current I =35A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V

 8.5. Size:215K  inchange semiconductor
 2sk1976.pdf

isc N-Channel MOSFET Transistor 2SK1976 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V