2SK2002-01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor 2SK2002-01MDESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE

N-channel MOS-FET2SK2002-01MRFAP-IIA Series 600V 4,5 3A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.comFuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.06 s (typ.) ont = 0.12 s (typ.) off Low drain-source ON resistance: R = 1.2 (typ.) DS (ON) Small

2SK2007 Silicon N Channel MOS FET REJ03G0991-0200 (Previous: ADE-208-1339) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0004ZE-A(Package na

2SK2008 Silicon N Channel MOS FET REJ03G0992-0200 (Previous: ADE-208-1340) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0003ZA-A(Package na

N-channel MOS-FET2SK2003-01MRFAP-IIA Series 600V 2,4 4A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

isc N-Channel MOSFET Transistor 2SK2003-01MDESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE