2SK2002-01M MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK2002-01M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.5 Ohm
Package: TO-220F
2SK2002-01M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK2002-01M Datasheet (PDF)
2sk2002-01m.pdf
isc N-Channel MOSFET Transistor 2SK2002-01MDESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
2sk2002-01mr.pdf
N-channel MOS-FET2SK2002-01MRFAP-IIA Series 600V 4,5 3A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2000-r.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.comFuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sk2009.pdf
2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellent switching times: t = 0.06 s (typ.) ont = 0.12 s (typ.) off Low drain-source ON resistance: R = 1.2 (typ.) DS (ON) Small
2sk2007.pdf
2SK2007 Silicon N Channel MOS FET REJ03G0991-0200 (Previous: ADE-208-1339) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0004ZE-A(Package na
2sk2008.pdf
2SK2008 Silicon N Channel MOS FET REJ03G0992-0200 (Previous: ADE-208-1340) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter, motor control Outline RENESAS Package code: PRSS0003ZA-A(Package na
2sk2003-01mr.pdf
N-channel MOS-FET2SK2003-01MRFAP-IIA Series 600V 2,4 4A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
2sk2003-01m.pdf
isc N-Channel MOSFET Transistor 2SK2003-01MDESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
