2SK2022-01M Todos los transistores

 

2SK2022-01M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2022-01M
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 40 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 85 pF
   Resistencia entre drenaje y fuente RDS(on): 1.6 Ohm
   Paquete / Cubierta: TO-220F

 Búsqueda de reemplazo de MOSFET 2SK2022-01M

 

2SK2022-01M Datasheet (PDF)

 ..1. Size:195K  fuji
2sk2022-01m.pdf

2SK2022-01M
2SK2022-01M

N-channel MOS-FET2SK2022-01MFAP-IIA Series 500V 1,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

 ..2. Size:212K  inchange semiconductor
2sk2022-01m.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2022-01MDESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:145K  fuji
2sk2028-01mr.pdf

2SK2022-01M
2SK2022-01M

 8.2. Size:169K  fuji
2sk2024-01.pdf

2SK2022-01M
2SK2022-01M

 8.3. Size:225K  fuji
2sk2021-01.pdf

2SK2022-01M
2SK2022-01M

N-channel MOS-FET2SK2021-01FAP-IIA Series 500V 1,6 5A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

 8.4. Size:204K  fuji
2sk2020-01mr.pdf

2SK2022-01M
2SK2022-01M

N-channel MOS-FET2SK2020-01MRFAP-IIA Series 500V 3 3,5A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

 8.5. Size:182K  fuji
2sk2027-01.pdf

2SK2022-01M
2SK2022-01M

 8.6. Size:226K  fuji
2sk2023-01.pdf

2SK2022-01M
2SK2022-01M

FUJI POWER MOSFET2SK2023-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c

 8.7. Size:186K  fuji
2sk2026-01.pdf

2SK2022-01M
2SK2022-01M

 8.8. Size:214K  fuji
2sk2025-01.pdf

2SK2022-01M
2SK2022-01M

N-channel MOS-FET2SK2025-01FAP-IIA Series 600V 2,4 4A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

 8.9. Size:213K  inchange semiconductor
2sk2028-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2028-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 8.10. Size:219K  inchange semiconductor
2sk2024-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2024-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.11. Size:215K  inchange semiconductor
2sk2021-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2021-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.12. Size:229K  inchange semiconductor
2sk2020-01mr.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2020-01MRDESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)

 8.13. Size:215K  inchange semiconductor
2sk2027-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2027-01DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.14. Size:212K  inchange semiconductor
2sk2020-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2020-01DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a

 8.15. Size:215K  inchange semiconductor
2sk2023-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2023-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.16. Size:219K  inchange semiconductor
2sk2026-01.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2026-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.17. Size:215K  inchange semiconductor
2sk2025.pdf

2SK2022-01M
2SK2022-01M

isc N-Channel MOSFET Transistor 2SK2025-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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