2SK2022-01M
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2022-01M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15
nS
Cossⓘ - Capacitancia
de salida: 85
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6
Ohm
Paquete / Cubierta:
TO-220F
Búsqueda de reemplazo de 2SK2022-01M
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2SK2022-01M
Datasheet (PDF)
..1. Size:195K fuji
2sk2022-01m.pdf 
N-channel MOS-FET2SK2022-01MFAP-IIA Series 500V 1,6 5A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv
..2. Size:212K inchange semiconductor
2sk2022-01m.pdf
isc N-Channel MOSFET Transistor 2SK2022-01MDESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.3. Size:225K fuji
2sk2021-01.pdf
N-channel MOS-FET2SK2021-01FAP-IIA Series 500V 1,6 5A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
8.4. Size:204K fuji
2sk2020-01mr.pdf
N-channel MOS-FET2SK2020-01MRFAP-IIA Series 500V 3 3,5A 30W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ
8.6. Size:226K fuji
2sk2023-01.pdf
FUJI POWER MOSFET2SK2023-01N-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switchingTO-220ABLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS=30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS3. Source DC-DC convertersJEDEC TO-220ABGeneral purpose power amplifierEIAJ SC-46Equivalent c
8.8. Size:214K fuji
2sk2025-01.pdf
N-channel MOS-FET2SK2025-01FAP-IIA Series 600V 2,4 4A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva
8.9. Size:213K inchange semiconductor
2sk2028-01.pdf
isc N-Channel MOSFET Transistor 2SK2028-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.10. Size:219K inchange semiconductor
2sk2024-01.pdf
isc N-Channel MOSFET Transistor 2SK2024-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.11. Size:215K inchange semiconductor
2sk2021-01.pdf
isc N-Channel MOSFET Transistor 2SK2021-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.12. Size:229K inchange semiconductor
2sk2020-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2020-01MRDESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)
8.13. Size:215K inchange semiconductor
2sk2027-01.pdf
isc N-Channel MOSFET Transistor 2SK2027-01DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.14. Size:212K inchange semiconductor
2sk2020-01.pdf
isc N-Channel MOSFET Transistor 2SK2020-01DESCRIPTIONDrain Current I = 3.5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)a
8.15. Size:215K inchange semiconductor
2sk2023-01.pdf
isc N-Channel MOSFET Transistor 2SK2023-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
8.16. Size:219K inchange semiconductor
2sk2026-01.pdf
isc N-Channel MOSFET Transistor 2SK2026-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.17. Size:215K inchange semiconductor
2sk2025.pdf
isc N-Channel MOSFET Transistor 2SK2025-01DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS
Otros transistores... 2SK1983
, 2SK1984
, 2SK1985
, 2SK2002-01M
, 2SK2003-01M
, 2SK2019-01
, 2SK2020-01
, 2SK2021-01
, RFP50N06
, 2SK2024-01
, 2SK2025
, 2SK2026-01
, 2SK2028-01MR
, 2SK2050
, 2SK2052
, 2SK2080-01
, 2SK2116
.
History: TK20E60W5
| HTD2K1P10
| PTP13N50B
