2SK2022-01M PDF Specs and Replacement
Type Designator: 2SK2022-01M
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 5
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Electrical Characteristics
tr ⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 85
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO-220F
-
MOSFET ⓘ Cross-Reference Search
2SK2022-01M PDF Specs
..1. Size:195K fuji
2sk2022-01m.pdf 
N-channel MOS-FET 2SK2022-01M FAP-IIA Series 500V 1,6 5A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv... See More ⇒
..2. Size:212K inchange semiconductor
2sk2022-01m.pdf
isc N-Channel MOSFET Transistor 2SK2022-01M DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
8.3. Size:225K fuji
2sk2021-01.pdf
N-channel MOS-FET 2SK2021-01 FAP-IIA Series 500V 1,6 5A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva... See More ⇒
8.4. Size:204K fuji
2sk2020-01mr.pdf
N-channel MOS-FET 2SK2020-01MR FAP-IIA Series 500V 3 3,5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ... See More ⇒
8.6. Size:226K fuji
2sk2023-01.pdf
FUJI POWER MOSFET 2SK2023-01 N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching TO-220AB Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS 3. Source DC-DC converters JEDEC TO-220AB General purpose power amplifier EIAJ SC-46 Equivalent c... See More ⇒
8.8. Size:214K fuji
2sk2025-01.pdf
N-channel MOS-FET 2SK2025-01 FAP-IIA Series 600V 2,4 4A 60W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiva... See More ⇒
8.9. Size:213K inchange semiconductor
2sk2028-01.pdf
isc N-Channel MOSFET Transistor 2SK2028-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
8.10. Size:219K inchange semiconductor
2sk2024-01.pdf
isc N-Channel MOSFET Transistor 2SK2024-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
8.11. Size:215K inchange semiconductor
2sk2021-01.pdf
isc N-Channel MOSFET Transistor 2SK2021-01 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
8.12. Size:229K inchange semiconductor
2sk2020-01mr.pdf
isc N-Channel MOSFET Transistor 2SK2020-01MR DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
8.13. Size:215K inchange semiconductor
2sk2027-01.pdf
isc N-Channel MOSFET Transistor 2SK2027-01 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
8.14. Size:212K inchange semiconductor
2sk2020-01.pdf
isc N-Channel MOSFET Transistor 2SK2020-01 DESCRIPTION Drain Current I = 3.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
8.15. Size:215K inchange semiconductor
2sk2023-01.pdf
isc N-Channel MOSFET Transistor 2SK2023-01 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
8.16. Size:219K inchange semiconductor
2sk2026-01.pdf
isc N-Channel MOSFET Transistor 2SK2026-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
8.17. Size:215K inchange semiconductor
2sk2025.pdf
isc N-Channel MOSFET Transistor 2SK2025-01 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
Detailed specifications: 2SK1983
, 2SK1984
, 2SK1985
, 2SK2002-01M
, 2SK2003-01M
, 2SK2019-01
, 2SK2020-01
, 2SK2021-01
, AON7410
, 2SK2024-01
, 2SK2025
, 2SK2026-01
, 2SK2028-01MR
, 2SK2050
, 2SK2052
, 2SK2080-01
, 2SK2116
.
History: IPB110P06LM
Keywords - 2SK2022-01M MOSFET specs
2SK2022-01M cross reference
2SK2022-01M equivalent finder
2SK2022-01M pdf lookup
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2SK2022-01M replacement
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