All MOSFET. 2SK2022-01M Datasheet

 

2SK2022-01M MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK2022-01M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-220F

 2SK2022-01M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK2022-01M Datasheet (PDF)

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