3N45 Todos los transistores

 ..1. Size:226K  inchange semiconductor
 3n45.pdf

isc N-Channel MOSFET Transistor 3N45 FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE M

 0.1. Size:729K  motorola
 mth13n45 mth13n50 mth15n35 mth15n40.pdf

 0.2. Size:163K  motorola
 mtp3n45 mtp3n50.pdf

 0.3. Size:481K  st
 stn3n45k3 stq3n45k3-ap stu3n45k3.pdf

STN3N45K3 STQ3N45K3-AP, STU3N45K3 N-channel 450 V, 3.2 , 1.8 A, TO-92, SOT-223, IPAK SuperMESH3 Power MOSFET Preliminary data Features RDS(on) Type VDSS ID Pw max 3 STN3N45K3 450 V

 0.4. Size:1009K  st
 stn3n45k3.pdf

STN3N45K3 N-channel 450 V - 3.3 typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features RDS(on) Order code VDSS max ID Pw 4 STN3N45K3 450 V

 0.5. Size:74K  ixys
 ixtk33n45 ixtk33n50.pdf

 0.6. Size:686K  pipsemi
 pta13n45.pdf

PTA13N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.30 13A RDS(ON),typ.=0.30 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D Other Applications S Ordering Information TO-220F Part Number Package Brand Package N

 0.7. Size:1182K  slkor
 sl13n45f.pdf

SL13N45F N-Channel Power MOSFET Features 13.0A, 450V, R =0.47 @V =10V DS(on)(Typ) GS Low Gate Charge Low C rss 100% Avalanche Tested Schematic diagram Fast Switching Improved dv/dt Capability Application High Frequency Switching Mode Power Supply Active Power Factor Correction TO-220F Absolute Maximum Ratings(Tc=25 C unless otherwi

 0.8. Size:777K  cn fx-semi
 fxn13n45f.pdf

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DS provides high performance in on-state resistance, fast switching ID = 13A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in in