isc N-Channel MOSFET Transistor 3N45FEATURESDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power supplies,converters,AC and DCmotor controlsABSOLUTE M

STN3N45K3STQ3N45K3-AP, STU3N45K3N-channel 450 V, 3.2 , 1.8 A, TO-92, SOT-223, IPAKSuperMESH3 Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS ID Pwmax3STN3N45K3 450 V

STN3N45K3N-channel 450 V - 3.3 typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 packageDatasheet - production dataFeaturesRDS(on) Order code VDSS max ID Pw4STN3N45K3 450 V

PTA13N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.30 13A RDS(ON),typ.=0.30 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D Other Applications S Ordering Information TO-220F Part Number Package Brand Package N

SL13N45FN-Channel Power MOSFET Features 13.0A, 450V, R =0.47@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche TestedSchematic diagram Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionTO-220FAbsolute Maximum Ratings(Tc=25C unless otherwi

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in