50N06FI Todos los transistores

 ..1. Size:225K  inchange semiconductor
 50n06fi.pdf

isc N-Channel MOSFET Transistor 50N06FI DESCRIPTION Drain Current I =27A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching Switc

 8.1. Size:1067K  rohm
 rsd050n06fra.pdf

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD050N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. Applications Switching Packaging specif

 8.2. Size:1006K  rohm
 rsd150n06fra.pdf

Data Sheet AEC-Q101 Qualified 4V Drive Nch MOSFET RSD150N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Applications Switching Packaging spec

 8.3. Size:40K  omnirel
 oms150n06f.pdf

OMS150N06FL OMS60L60FL Preliminary Data Sheet OMS120N10FL OMS50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules, H-Bridge Configuration FEATURES Isolated Heat Sink Low Inductance Design Fast Switching Speed Low On Voltage Easy-To-Connect To Package DESCRIPTION These modules are ideally suited for high d

 8.4. Size:1911K  jilin sino
 jcs50n06vh jcs50n06rh jcs50n06ch jcs50n06fh.pdf

N R N-CHANNEL MOSFET JCS50N06H Package MAIN CHARACTERISTICS ID 50 A VDSS 60 V Rdson-max 23 m @Vgs=10V Qg-typ 34 nC APPLICATIONS High frequency switch UPS mode power supplies UPS FEATURES Low gate charge

 8.5. Size:418K  nell
 50n06a 50n06af 50n06f 50n06g.pdf

RoHS 50N06 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (50A, 60Volts) DESCRIPTION D The Nell 50N06 is a three-terminal silicon D device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts. G S They are designed for use in applications

 8.6. Size:1704K  cn wxdh
 dh50n06fzc dhf50n06fzc dhi50n06fzc dhe50n06fzc dhb50n06fzc dhd50n06fzc.pdf

 8.7. Size:499K  convert
 cs50n06f cs50n06p cs50n06u cs50n06d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS50N06F,CS50N06P,CS50N06U,CS50N06D 60V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS50N06F TO-

 8.8. Size:521K  chongqing pingwei
 50n06 50n06f 50n06b 50n06h 50n06g 50n06d.pdf

50N06(F,B,H,G,D) 50 Amps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,R =17.5m @VGS=10V/25A DS(ON)MAX R =20m @VGS=4.5V/25A DS(ON)MAX Low gate charge Low C iss TO-220AB ITO-220AB TO-262 Fast switching 100% avalanche tested 50N06 50N06F 50N06H Improved dv/dt capability TO-263 TO-252 TO-251 50N06B 50N06G 50N06D Absolute Maximum Ratings(T =25 ,unless otherwi