BUK454-200B MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BUK454-200B datasheet

4.1. Size:58K philips
buk454-200a-b 1.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power diss

4.2. Size:228K inchange semiconductor
buk454-200.pdf pdf_icon

isc N-Channel MOSFET Transistor BUK454-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU

7.1. Size:64K philips
buk454-800a-b.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK454 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.4 2.0 A (SMPS)

7.2. Size:51K philips
buk454-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mod