BUK454-200B - описание и поиск аналогов

Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for use in surface VDS Drain-source voltage 200 V mount applications. ID Drain current (DC) 9.2 A The device is intended for use in Ptot Total power diss

isc N-Channel MOSFET Transistor BUK454-200A/B DESCRIPTION Drain Source Voltage- V =200V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU

Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic envelope. BUK454 -800A -800B The device is intended for use in VDS Drain-source voltage 800 800 V Switched Mode Power Supplies ID Drain current (DC) 2.4 2.0 A (SMPS)

Philips Semiconductors Product specification PowerMOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A automotive applications, Switched Ptot Total power dissipation 125 W Mod

isc N-Channel MOSFET Transistor BUK454-800A/B DESCRIPTION Drain Source Voltage- V =800V(Min) DSS Low R DS(ON) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for Switched Mode Power Supplies (SMPS), motor control,welding, and in general purpose switching resistance application ABSOLUTE MAXIMU