BUK454-200B - параметры транзистора MOSFET, его аналоги, datasheet

BUK454-200B Datasheet (PDF)

4.1. Size:58K philips
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Philips Semiconductors Product Specification PowerMOS transistor BUK454-200A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope suitable for use in surface VDS Drain-source voltage 200 Vmount applications. ID Drain current (DC) 9.2 AThe device is intended for use in Ptot Total power diss

4.2. Size:228K inchange semiconductor
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isc N-Channel MOSFET Transistor BUK454-200A/BDESCRIPTIONDrain Source Voltage-: V =200V(Min)DSSLow RDS(ON)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switched Mode Power Supplies (SMPS),motor control,welding, and in general purpose switchingresistance applicationABSOLUTE MAXIMU

7.1. Size:64K philips
buk454-800a-b.pdf pdf_icon

Philips Semiconductors Product Specification PowerMOS transistor BUK454-800A/B GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNITfield-effect power transistor in aplastic envelope. BUK454 -800A -800BThe device is intended for use in VDS Drain-source voltage 800 800 VSwitched Mode Power Supplies ID Drain current (DC) 2.4 2.0 A(SMPS)

7.2. Size:51K philips
buk454-60h 1.pdf pdf_icon

Philips Semiconductors Product specification PowerMOS transistor BUK454-60H GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 41 Aautomotive applications, Switched Ptot Total power dissipation 125 WMod