SML1004R2BN Todos los transistores

 

SML1004R2BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SML1004R2BN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.2 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

SML1004R2BN Datasheet (PDF)

 5.1. Size:18K  semelab
sml1004r2gxn.pdf pdf_icon

SML1004R2BN

SML1004R2GXNSEMELAB4TH GENERATION MOSFETTO257 Package Outline.Dimensions in mm (inches)4.83 (0.190) NCHANNEL5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)ENHANCEMENT MODE1.14 (0.045)HIGH VOLTAGE3.56 (0.140)Dia.3.81 (0.150)ISOLATEDPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.0ARDS(on) 4.200.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120

 8.1. Size:20K  semelab
sml100c4.pdf pdf_icon

SML1004R2BN

SML100C4TO254 Package Outline.Dimensions in mm (inches)13.59 (0.535) 6.32 (0.249)NCHANNEL13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.6ARDS(on) 4.000.89 (0.035)1.14 (0.045)3.81 (0.150)3.81 (0.150) BSCBSC Faster SwitchingPin 1 Drain Pin 2

 8.2. Size:105K  semelab
sml100m12msf.pdf pdf_icon

SML1004R2BN

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe

 8.3. Size:20K  semelab
sml100s13.pdf pdf_icon

SML1004R2BN

SML100S13D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS

Otros transistores... SML10026DFN , SML1002R4AN , SML1002R4BN , SML1002R4CN , SML1002RAN , SML1002RBN , SML1002RCN , SML1004R2AN , IRF9540N , SML1004R2CN , SML1004R2GN , SML1004R2KN , SML1004RAN , SML1004RBN , SML1004RCN , SML1004RGN , SML1004RKN .

History: RUH1H150R-A | IRF624A | RFP4N40 | IXFN64N60P | TSM150P04LCS | DMC2041UFDB | SMP40N10

 

 
Back to Top

 


 
.