SML1004R2BN MOSFET. Datasheet pdf. Equivalent

   Type Designator: SML1004R2BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 950 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO247

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SML1004R2BN Datasheet (PDF)

5.1. Size:18K semelab
sml1004r2gxn.pdf pdf_icon

SML1004R2GXNSEMELAB4TH GENERATION MOSFETTO257 Package Outline.Dimensions in mm (inches)4.83 (0.190) NCHANNEL5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)ENHANCEMENT MODE1.14 (0.045)HIGH VOLTAGE3.56 (0.140)Dia.3.81 (0.150)ISOLATEDPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.0ARDS(on) 4.200.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120

8.1. Size:20K semelab
sml100c4.pdf pdf_icon

SML100C4TO254 Package Outline.Dimensions in mm (inches)13.59 (0.535) 6.32 (0.249)NCHANNEL13.84 (0.545) 6.60 (0.260)3.53 (0.139) 1.02 (0.040)Dia.3.78 (0.149) 1.27 (0.050)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS1 2 3VDSS 1000VID(cont) 3.6ARDS(on) 4.000.89 (0.035)1.14 (0.045)3.81 (0.150)3.81 (0.150) BSCBSC Faster SwitchingPin 1 Drain Pin 2

8.2. Size:105K semelab
sml100m12msf.pdf pdf_icon

NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF RDS(on)max of 0.150 High Temperature Operation Tj = 200C Low Gate Charge and Intrinsic Capacitance Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS UPS SMPS Induction Heating Motor Drive ABSOLUTE MAXIMUM RATINGS (TC = 25C unless othe

8.3. Size:20K semelab
sml100s13.pdf pdf_icon

SML100S13D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS

8.4. Size:18K semelab
sml1001rhn sml901rhn sml901r1hn.pdf pdf_icon

SML1001RHNSML901RHN0TO258 Package Outline.4TH GENERATION MOSFETDimensions in mm (Inches)6.86 (0.270)6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)NCHANNEL0.88 (0.035)ENHANCEMENT MODE4.19 (0.165) HIGH VOLTAGE3.94 (0.155)Dia.1 2 3POWER MOSFETSD5.08 (0.200) 3.56 (0.140)GBSC BSC1.65 (0.065)1.39 (0.055)STyp.Pin 1 Drain Pin 2 Sourc

8.5. Size:21K semelab
sml100b13 sml100b13f.pdf pdf_icon

SML100B13TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1000V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 13A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 0.8602.

8.6. Size:21K semelab
sml100b11 sml100b11f.pdf pdf_icon

SML100B11TO247AD Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610) NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETS3.55 (0.140)3.81 (0.150)1 2 3 VDSS 1000V1.65 (0.065)2.13 (0.084)0.40 (0.016)ID(cont) 11A0.79 (0.031) 2.87 (0.113)3.12 (0.123)1.01 (0.040)1.40 (0.055) RDS(on) 1.0002.

8.7. Size:60K semelab
sml1001r sml901r sml901r1an sml901r3an.pdf pdf_icon

SML1001R1AN 1000V 9.5A 1.10SML901R1AN 900V 9.5A 1.10SEMESML1001R3AN 1000V 8.5A 1.30SML901R3AN 900V 8.5A 1.30LABTO3 Package Outline.Dimensions in mm (Inches)POWER MOS IVNCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSMAXIMUM RATINGS (Tcase =25C unless otherwise stated)SMLParameter 901R1AN 1001R1AN 901R3AN 1001R3AN Unit900 1000 900 1000 VVDSS Drain S

8.8. Size:20K semelab
sml100s11.pdf pdf_icon

SML100S11D3PAK Package Outline.Dimensions in mm (inches)NCHANNEL4.98 (0.196)5.08 (0.200)ENHANCEMENT MODE15.95 (0.628) 13.41 (0.528)1.47 (0.058) 16.05 (0.632) 13.51 (0.532)1.04 (0.041)1.57 (0.062)1.15 (0.045)HIGH VOLTAGE11.51 (0.453)POWER MOSFETS13.79 (0.543)11.61 (0.457)13.99 (0.551)0.46 (0.018)0.56 (0.022)1 2 33 plcs. 1.27 (0.050)1.40 (0.055)VDS

8.9. Size:23K semelab
sml100j22.pdf pdf_icon

SML100J22SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3

8.10. Size:23K semelab
sml100j19 sml100j19f.pdf pdf_icon

SML100J19SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3

8.11. Size:20K semelab
sml100a9.pdf pdf_icon

SML100A9TO3 Package Outline.Dimensions in mm (inches)NCHANNEL25.15 (0.99) ENHANCEMENT MODE6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)HIGH VOLTAGE11.18 (0.44) 1.52 (0.06)3.43 (0.135)POWER MOSFETSVDSS 1000V1 2ID(cont) 9A3(case)RDS(on) 1.1003.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50) Faster Switching Lower LeakagePin 1

8.12. Size:23K semelab
sml100j34.pdf pdf_icon

SML100J34SOT227 Package Outline.Dimensions in mm (inches)11.8 (0.463)12.2 (0.480)31.5 (1.240)NCHANNEL31.7 (1.248)8.9 (0.350)7.8 (0.307)4.1 (0.161 )8.2 (0.322) W = 9.6 (0.378)Hex Nut M 44.3 (0.169 )ENHANCEMENT MODE(4 places)4.8 (0.187)H =4.9 (0.193)1 2(4 places) HIGH VOLTAGERPOWER MOSFETS4.0 (0.157) 0.75 (0.030)4.2 (0.165) 0.85 (0.033)4 3

8.13. Size:26K semelab
sml100h11.pdf pdf_icon

SML100H11TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 1000VID(cont) 11ARDS(on) 0.8805.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower

8.14. Size:19K semelab
sml100l16.pdf pdf_icon

SML100L16TO264AA Package Outline.Dimensions in mm (inches)1.80 (0.071)2.01 (0.079) NCHANNEL4.60 (0.181) 19.51 (0.768)5.21 (0.205) 26.49 (0.807)3.10 (0.122)ENHANCEMENT MODE3.48 (0.137)HIGH VOLTAGEPOWER MOSFETSVDSS 1000V1 2 32.29 (0.090)ID(cont) 21A2.69 (0.106)2.79 (0.110)3.18 (0.125)RDS(on) 0.5000.48 (0.019) 0.76 (0.030)0.84 (0.033) 1.30 (0

8.15. Size:19K semelab
sml100t21.pdf pdf_icon

SML100T21T247clip Package Outline.Dimensions in mm (inches)4.69 (0.185) 15.49 (0.610)NCHANNEL5.31 (0.209) 16.26 (0.640)1.49 (0.059)2.49 (0.098)ENHANCEMENT MODE5.38 (0.212)6.20 (0.244)HIGH VOLTAGEPOWER MOSFETS2VDSS 1000V1 2 32.87 (0.113)ID(cont) 21A0.40 (0.016)3.12 (0.123) 0.79 (0.031)1.65 (0.065)2.13 (0.084) RDS(on) 0.5001.01 (0.040)1.40 (0.0

8.16. Size:26K semelab
sml100w18.pdf pdf_icon

SML100W18TO267 Package Outline.Dimensions in mm (inches)NCHANNELENHANCEMENT MODEHIGH VOLTAGEPOWER MOSFETSVDSS 1000VID(cont) 17.3ARDS(on) 0.570 Faster Switching Lower Leakage TO267 Hermetic PackageDStarMOS is a new generation of high voltageNChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,Gincre

8.17. Size:22K semelab
sml100h9.pdf pdf_icon

SML100H9TO258 Package Outline.Dimensions in mm (inches)6.86 (0.270)NCHANNEL6.09 (0.240)17.65 (0.695)17.39 (0.685)1.14 (0.707)ENHANCEMENT MODE0.88 (0.035)HIGH VOLTAGEPOWER MOSFETS4.19 (0.165)3.94 (0.155)Dia.1 2 3VDSS 1000VID(cont) 9ARDS(on) 1.1005.08 (0.200) 3.56 (0.140)BSC BSC Faster Switching1.65 (0.065)1.39 (0.055) Lower Le

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SML1004R2BN MOSFET. Datasheet pdf. Equivalent

SML1004R2BN Datasheet (PDF)

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