RU6888R3 Todos los transistores

 

RU6888R3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU6888R3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 88 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220S

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RU6888R3 datasheet

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RU6888R3

RU6888R3 N-Channel Advanced Power MOSFET Features Pin Description 68V/88A, Insulation Slug RDS (ON) =6m (Typ.)@VGS=10V Insulation Slug(VISO 1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested 175 C Operating Temperature S Lead Free and Green

 7.1. Size:303K  ruichips
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RU6888R3

RU6888R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 68V/88A, RDS (ON) =6m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inverte

 8.1. Size:303K  ruichips
 ru6888m.pdf pdf_icon

RU6888R3

RU6888M N-Channel Advanced Power MOSFET Features Pin Description 60V/62A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested Lead Free and Green Devices Available PDFN5060 (RoHS Compliant) Applications Power Management. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Uni

 8.2. Size:461K  ruichips
 ru6888.pdf pdf_icon

RU6888R3

RU6888 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 68V/88A, RDS (ON) =6.0m (Type) @ VGS=10V Ultra Low On-Resistance TO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-263 TO-247 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Applicat

MOSTRAR MÁS

Otros transistores... BUZ14 , BUZ15 , BUZ205 , BUZ211 , BUZ330 , IRFAC32 , JCS24N50WH , JCS24N50ABH , IRFB4115 , SPP77N06S2-12 , SPB77N06S2-12 , TSA20N50M , M7002NND03 , M7002TTD03 , MC3406 , MC3541 , MCD04N60 .

History: HCD65R2K2 | HY3410B | RUE002N02 | HY3410PM | RF4E110BN

 

 

 

 

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