MC3406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MC3406
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 165 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MC3406 MOSFET
MC3406 Datasheet (PDF)
mc3406.pdf

Analog Power AM2322N Freescale AO3406/ MC3406 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DCVDS (V) rDS (on ) () ID (A) converters and power management in portable and 0.085 @ VGS = 10V
dmc3400sdw.pdf

DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 0.4 @ VGS = 10V 0.65A ESD Protected Gate Q1 30 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.7 @ VGS = 4.5V 0.52A Halogen an
smc3407.pdf

SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design
smc3401.pdf

SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle
Otros transistores... JCS24N50WH , JCS24N50ABH , RU6888R3 , SPP77N06S2-12 , SPB77N06S2-12 , TSA20N50M , M7002NND03 , M7002TTD03 , IRF9540 , MC3541 , MCD04N60 , MCD04N65 , MCD3410 , MS10N60 , MS10N65 , MS10N80 , MS12N60 .
History: AOCA24106E | FA57SA50LCP | SM2202NSQG
History: AOCA24106E | FA57SA50LCP | SM2202NSQG



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