Справочник MOSFET. MC3406

 

MC3406 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MC3406
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 3.5 nC
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 165 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.085 Ohm
   Тип корпуса: SOT-23

 Аналог (замена) для MC3406

 

 

MC3406 Datasheet (PDF)

 ..1. Size:373K  freescale
 mc3406.pdf

MC3406 MC3406

Analog Power AM2322N Freescale AO3406/ MC3406 N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DCVDS (V) rDS (on ) () ID (A) converters and power management in portable and 0.085 @ VGS = 10V

 9.1. Size:348K  diodes
 dmc3400sdw.pdf

MC3406 MC3406

DMC3400SDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max Device V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 0.4 @ VGS = 10V 0.65A ESD Protected Gate Q1 30 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.7 @ VGS = 4.5V 0.52A Halogen an

 9.2. Size:369K  semtron
 smc3407.pdf

MC3406 MC3406

SMC3407 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3407 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ.)@VGS =-10V mode power field effect transistor is produced using -30V/-3.0A, RDS(ON) =70m(typ.)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON) Super high density cell design

 9.3. Size:372K  semtron
 smc3401.pdf

MC3406 MC3406

SMC3401 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3401 is the P-Channel logic enhancement -30V/-4.3A, RDS(ON) =44m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-3.5A, RDS(ON) =50m(typ)@VGS =-4.5V high cell density. advanced trench technology to -30V/-2.5A, RDS(ON) =65m(typ)@VGS =-2.5V provide excelle

 9.4. Size:361K  semtron
 smc3400.pdf

MC3406 MC3406

SMC3400 30V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC3400 is the N-Channel logic enhancement 30V/5A, RDS(ON) =25m(typ.)@VGS =10V mode power field effect transistor is produced using 30V/4A, RDS(ON) =28m(typ.)@VGS =4.5V high cell density. advanced trench technology to 30V/3A, RDS(ON) =37m(typ.)@VGS =2.5V provide excellent RDS(ON).lo

 9.5. Size:907K  cn vbsemi
 smc3407s.pdf

MC3406 MC3406

SMC3407Swww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

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