MS10N80 Todos los transistores

 ..1. Size:977K  bruckewell
 ms10n80.pdf

MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic

 9.1. Size:854K  bruckewell
 ms10n65.pdf

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150

 9.2. Size:965K  bruckewell
 ms10n60.pdf

MS10N60 600V N-Channel MOSFET General Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Re

 9.3. Size:994K  way-on
 wms10n04ts.pdf

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMS10N04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 40V, I =10A DS D R

 9.4. Size:979K  cn hmsemi
 hms10n60k hms10n60i.pdf

HMS10N60K/HMS10N60I HMS10N60K/HMS10N60I 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using H&M Semi s - 10A, 600V, RDS(on) typ. = 0.42 @VGS = 10 V Advanced Super-Junction technology. - Low gate charge ( typical 35nC) This advanced technology has been especially tailored - High ruggedness to minimize conduction loss, provide superior switching - Fast