MS10N80 MOSFET Datasheet: N-Ch, 800V, 10A. Full specification with pinout and replacement list

MS10N80 Specs and Replacement

Type Designator: MS10N80

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO-220

MS10N80 substitution

- MOSFET ⓘ Cross-Reference Search

MS10N80 datasheet

..1. Size:977K bruckewell
ms10n80.pdf pdf_icon

MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic... See More ⇒

9.1. Size:854K bruckewell
ms10n65.pdf pdf_icon

MS10N65 N-Channel Enhancement Mode Power MOSFET Description The MS10N65 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=700V typically @ Tj=150... See More ⇒

9.2. Size:965K bruckewell
ms10n60.pdf pdf_icon

MS10N60 600V N-Channel MOSFET General Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Re... See More ⇒

9.3. Size:994K way-on
wms10n04ts.pdf pdf_icon

WMS10N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D WMS10N04TS uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S S S G Features SOP-8L V = 40V, I =10A DS D R ... See More ⇒