MS15N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MS15N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MS15N50 MOSFET
MS15N50 Datasheet (PDF)
ms15n50.pdf

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl
ms15n60.pdf

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl
wms15n03t1.pdf

WMS15N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS15N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 15A DS DR
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore
Otros transistores... MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , IRF9540N , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 .
History: FHP12N65C | FDMS0308AS | BRD65R1K0C | KIA2906A-247 | TMP5N60Z | 10N60AF | TMP6N65
History: FHP12N65C | FDMS0308AS | BRD65R1K0C | KIA2906A-247 | TMP5N60Z | 10N60AF | TMP6N65



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