MS15N50 Todos los transistores

 

MS15N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS15N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 140 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: TO-220

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MS15N50 datasheet

 ..1. Size:397K  bruckewell
ms15n50.pdf pdf_icon

MS15N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 9.1. Size:366K  bruckewell
ms15n60.pdf pdf_icon

MS15N50

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 9.2. Size:766K  way-on
wms15n03t1.pdf pdf_icon

MS15N50

WMS15N03T1 30V N-Channel Enhancement Mode Power MOSFET D Description D D WMS15N03T1 uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and S yet maintain superior switching performance. S S G Features SOP-8L V = 30V, I = 15A DS D R

 9.3. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf pdf_icon

MS15N50

HMS15N70K,HMS15N70I,HMS15N70 HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET Features General Description Features -15A, 700V, RDS(on) typ.= 0.3 @VGS = 10 V This Power MOSFET is produced using H&M Semi s Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailore

Otros transistores... MS10N65 , MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , SKD502T , MS15N60 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 .

History: 2N7002KDW | HU830U | JMSH0602AE | 2SJ551 | ASDM30N65E | IAUS200N08S5N023 | APT1001RBLC

 

 

 

 

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