Справочник MOSFET. MS15N50

 

MS15N50 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MS15N50
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 250 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 140 ns
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

MS15N50 Datasheet (PDF)

 ..1. Size:397K  bruckewell
ms15n50.pdfpdf_icon

MS15N50

MS15N50 N-Channel Enhancement Mode Power MOSFET Description The MS15N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 9.1. Size:366K  bruckewell
ms15n60.pdfpdf_icon

MS15N50

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 9.2. Size:766K  way-on
wms15n03t1.pdfpdf_icon

MS15N50

WMS15N03T1 30V N-Channel Enhancement Mode Power MOSFET DDescriptionDDWMS15N03T1 uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and Syet maintain superior switching performance. SSGFeatures SOP-8L V = 30V, I = 15A DS DR

 9.3. Size:1235K  cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdfpdf_icon

MS15N50

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB049NE7N3G | PMN70XPE | SSF1010A | NTP2955 | IPW65R190CFD | LR024N | SMK0460D

 

 
Back to Top

 


 
.