MS15N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MS15N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 245 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 36 nC
   trⓘ - Tiempo de subida: 78 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET MS15N60

MS15N60 Datasheet (PDF)

..1. Size:366K bruckewell
ms15n60.pdf

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

0.1. Size:989K cn hmsemi
hms15n60 hms15n60f hms15n60d.pdf

HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and

0.2. Size:1023K cn hmsemi
hms15n60a.pdf

HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

8.1. Size:869K cn hmsemi
hms15n65a.pdf

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

8.2. Size:578K cn hmsemi
hms15n65i hms15n65k.pdf

HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

8.3. Size:952K cn hmsemi
hms15n65 hms15n65f hms15n65d.pdf

HMS15N65D, HMS15N65, HMS15N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 15 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power ap

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Liste

Recientemente añadidas las descripciónes de los transistores: