MS15N60 - описание и поиск аналогов

 

MS15N60. Аналоги и основные параметры

Наименование производителя: MS15N60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 245 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 78 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm

Тип корпуса: TO-220

Аналог (замена) для MS15N60

- подборⓘ MOSFET транзистора по параметрам

 

MS15N60 даташит

 ..1. Size:366K  bruckewell
ms15n60.pdfpdf_icon

MS15N60

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 0.1. Size:989K  cn hmsemi
hms15n60 hms15n60f hms15n60d.pdfpdf_icon

MS15N60

HM 15N60D, HM 15N60, HM 15N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 0.2. Size:1023K  cn hmsemi
hms15n60a.pdfpdf_icon

MS15N60

HMS15N60A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 8.1. Size:869K  cn hmsemi
hms15n65a.pdfpdf_icon

MS15N60

HMS15N65A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

Другие MOSFET... MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , K4145 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 .

History: AP4616

 

 

 

 

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