Справочник MOSFET. MS15N60

 

MS15N60 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MS15N60
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 78 ns
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.52 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для MS15N60

   - подбор ⓘ MOSFET транзистора по параметрам

 

MS15N60 Datasheet (PDF)

 ..1. Size:366K  bruckewell
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MS15N60

MS15N60 N-Channel Enhancement Mode Power MOSFET Description The MS15N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simpl

 0.1. Size:989K  cn hmsemi
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MS15N60

HM 15N60D, HM 15N60, HM 15N60FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON)MAX 60 gate charge. This super junction MOSFET fits the industrys ID 1 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and

 0.2. Size:1023K  cn hmsemi
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MS15N60

HMS15N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

 8.1. Size:869K  cn hmsemi
hms15n65a.pdfpdf_icon

MS15N60

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

Другие MOSFET... MS10N80 , MS12N60 , MS12N65 , MS13N50 , MS13P21 , MS14N60 , MS14P21 , MS15N50 , IRFB3607 , MS17N03Q8 , MS18N50 , MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 .

History: FCD1300N80Z | SQM120N03-1M5L

 

 
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