MSAER30N20A Todos los transistores

 

MSAER30N20A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MSAER30N20A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 190 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO-276AB

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MSAER30N20A datasheet

 ..1. Size:42K  microsemi
 msaer30n20a msafr30n20a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER30N20A FAX (714) 966-5256 MSAFR30N20A Features 200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 85 m Hermetically sealed, surface mount power package Low pa

 8.1. Size:34K  microsemi
 38n10a msaer38n10a msafr38n10a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER38N10A FAX (714) 966-5256 MSAFR38N10A Features 100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 55 m Hermetically sealed, surface mount power package Low pa

 9.1. Size:44K  microsemi
 msaer12n50a msafr12n50a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p

 9.2. Size:154K  microsemi
 msaer57n10a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 FAX (714) 966-5256 MSAER57N10A Features 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175 C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL

MOSTRAR MÁS

Otros transistores... MS85N06 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , MSAER12N50A , AON7403 , MSAER38N10A , MSAER57N10A , MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , MSAFX11P50A .

 

 

 

 

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