MSAER30N20A Todos los transistores

 

MSAER30N20A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSAER30N20A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO-276AB
     - Selección de transistores por parámetros

 

MSAER30N20A Datasheet (PDF)

 ..1. Size:42K  microsemi
 msaer30n20a msafr30n20a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER30N20AFAX: (714) 966-5256MSAFR30N20AFeatures200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low pa

 8.1. Size:34K  microsemi
 38n10a msaer38n10a msafr38n10a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa

 9.1. Size:44K  microsemi
 msaer12n50a msafr12n50a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER12N50AFAX: (714) 966-5256MSAFR12N50AFeatures500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability400 m Hermetically sealed, surface mount power package Low p

 9.2. Size:154K  microsemi
 msaer57n10a.pdf pdf_icon

MSAER30N20A

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10AFeatures 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK2931 | FQPF13N50C

 

 
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