MSAFX11P50A Todos los transistores

 

MSAFX11P50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSAFX11P50A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO-276AB
 

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MSAFX11P50A Datasheet (PDF)

 ..1. Size:44K  microsemi
 msafx11p50a.pdf pdf_icon

MSAFX11P50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX11P50AFeatures500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability750 m Hermetically sealed, surface mount power package

 8.1. Size:37K  microsemi
 10n90a msafx10n90a.pdf pdf_icon

MSAFX11P50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAFX10N90AFeatures900 Volts Ultrafast body diode10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Rev

 9.1. Size:33K  microsemi
 msafx76n07a.pdf pdf_icon

MSAFX11P50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX76N07AFeatures70 Volts Ultrafast body diode76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL

 9.2. Size:34K  microsemi
 20n60a msafx20n60a.pdf pdf_icon

MSAFX11P50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance

MOSTRAR MÁS

Otros transistores... MSAER30N20A , MSAER38N10A , MSAER57N10A , MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A , 5N50 , MSAFX20N60A , MSAFX75N10A , MSAFZ50N10A , MSB15N60 , MSB22A04Q8 , MSB55N03N3 , MSC22N03 , MSC37N03 .

History: IPP80CN10N | IRFPS35N50LPBF | VB5222 | 4N90G-T3N-T | NCEP40T11G | SSF1331P | ME20P03-G

 

 
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