MSAFX11P50A MOSFET. Datasheet pdf. Equivalent
Type Designator: MSAFX11P50A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 160 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO-276AB
MSAFX11P50A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MSAFX11P50A Datasheet (PDF)
msafx11p50a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX11P50AFeatures500 Volts High voltage p-channel power mosfet; complements MSAFX24N50A Ultrafast body diode11 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability750 m Hermetically sealed, surface mount power package
10n90a msafx10n90a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256 MSAFX10N90AFeatures900 Volts Ultrafast body diode10 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability1.1 Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL Rev
msafx76n07a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX76N07AFeatures70 Volts Ultrafast body diode76 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability12 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL
20n60a msafx20n60a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX20N60AFeatures600 Volts Ultrafast body diode 20 Amps Rugged polysilicon gate cell structure350 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductanceN-CHANNEL Very low thermal resistance
msafx75n10a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX75N10AFeatures100 Volts Ultrafast body diode75 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability20 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL
msafx40n30a.pdf
2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220FAX: (714) 966-5256MSAFX40N30AFeatures300 Volts Ultrafast body diode40 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low package inductance Very low thermal resistanceN-CHANNEL
msafx50n20a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com N-Channel Enhancement Mode Power Mosfet DEVICES MSAFX50N20A 200 Volts50 Amps45 m FEATURES Ultrafast body diode Rugged poly
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK4210
History: 2SK4210
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